? 2004 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 1000 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 10n100 10 a 12n100 12 a i dm t c = 25 c, pulse width limited by t jm 10n100 40 a 12n100 48 a i ar t c = 25 c 10n100 10 a 12n100 12 a e ar t c = 25 c30mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque 1.13/10 nm/lb.in. weight to-204 = 18 g, to-247 = 6 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3 ma 1000 v v gs(th) v ds = v gs , i d = 4 ma 2.0 4.5 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = 0.8 ? v dss t j =25 c 250 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 10n100 1.20 ? 12n100 1.05 ? pulse test, t 300 s, duty cycle d 2 % n-channel enhancement mode high dv/dt, low t rr , hdmos tm family to-247 ad (ixfh) to-204 aa (ixfm) g = gate, d = drain, s = source, tab = drain features z international standard packages z low r ds (on) hdmos tm process z rugged polysilicon gate cell structure z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect z fast intrinsic rectifier applications z dc-dc converters z synchronous rectification z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor control z temperature and lighting controls z low voltage relays advantages z easy to mount with 1 screw (to-247) (isolated mounting screw hole) z space savings z high power density d g v dss i d25 r ds(on) ixfh/ixfm 10 n100 1000 v 10 a 1.20 ? ? ? ? ? ixfh/ixfm 12 n100 1000 v 12 a 1.05 ? ? ? ? ? t rr 250 ns (tab) hiperfet tm power mosfets ds91531f(01/04)
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 , pulse test 6 10 s c iss 4000 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 310 pf c rss 70 pf t d(on) 21 50 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 33 50 ns t d(off) r g = 2 ? (external), 62 100 n s t f 32 50 ns q g(on) 122 155 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 30 45 nc q gd 50 80 nc r thjc 0.42 k/w r thck 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 10n100 10 a 12n100 12 a 13n100 12.5 a i sm repetitive; 10n100 40 a pulse width limited by t jm 12n100 48 a 13n100 50 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr t j =25 c 250 ns t j = 125 c 400 ns q rm t j =25 c1 c t j = 125 c2 c i rm t j =25 c10a t j = 125 c15a i f = i s -di/dt = 100 a/ s, v r = 100 v dim. mi llimeter inches min. max. min. max. a 6.4 11.4 .250 .450 a1 3.42 .135 ? b .97 1.09 .038 .043 ? d 22.22 .875 e 10.67 11.17 .420 .440 e1 5.21 5.71 .205 .225 l 7.93 .312 ? p 3.84 4.19 .151 .165 ? p1 3.84 4.19 .151 .165 q 30.15 bsc 1.187 bsc r 13.33 .525 r1 4.77 .188 s 16.64 17.14 .655 .675 to-204 aa (ixfm) outline pins 1 - gate 2 - source case - drain dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-247 ad (ixfh) outline terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 ixfh 10n100 ixfh 12n100 ixfm 10n100 ixfm 12n100
? 2004 ixys all rights reserved fig. 1 output characteristics fig. 2 input admittance fig. 5 drain current vs. fig. 6 temperature dependence of case temperature breakdown and threshold voltage fig. 3 r ds(on) vs. drain current fig. 4 temperature dependence of drain to source resistance t j - degrees c -50 -25 0 25 50 75 100 125 150 bv/v g(th) - normalized 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 bv dss v gs(th) t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 2 4 6 8 10 12 14 16 18 20 10n100 t j - degrees c -50 -25 0 25 50 75 100 125 150 r ds(on) - normalized 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 i d - amperes 0 5 10 15 20 25 r ds(on) - normalized 0.9 1.0 1.1 1.2 1.3 1.4 1.5 v gs = 10v v gs - volts 012345678910 i d - amperes 0 2 4 6 8 10 12 14 16 18 20 v ds - volts 0 5 10 15 20 i d - amperes 0 2 4 6 8 10 12 14 16 18 20 6v 7v v gs = 10v 12n100 i d = 6a v gs = 15v 5v t j = 25c t j = 25c t j = 25c ixfh 10n100 ixfh 12n100 ixfm 10n100 ixfm 12n100
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 fig.7 gate charge characteristic curve fig.8 forward bias safe operating area fig.8 capacitance curves fig.9 source current vs. source to drain voltage fig.10 transient thermal impedance v ds - volts 1 10 100 1000 i d - amperes 0.1 1 10 gate charge - ncoulombs 0 25 50 75 100 125 150 v gs - volts 0 1 2 3 4 5 6 7 8 9 10 v sd - volts 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i d - amperes 0 2 4 6 8 10 12 14 16 18 20 v ds - volts 0 5 10 15 20 capacitance - pf 0 500 1000 1500 2000 2500 3000 3500 4000 4500 time - seconds 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal response - k / w 0.001 0.01 0.1 1 d=0.5 c rss c oss 10s 100s 1ms 10ms 100ms c iss limited by r ds(on) v ds = 500v i d = 6a i g = 10ma single pulse f = 1mhz v ds = 25v t j = 125c t j = 25c d=0.2 d=0.1 d=0.05 d=0.01 d=0.02 ixfh 10n100 ixfh 12n100 ixfm 10n100 ixfm 12n100
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